Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
Identifieur interne : 001203 ( Russie/Analysis ); précédent : 001202; suivant : 001204Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
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Abstract
The construction of a high power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diode with reduced values of parasitic capacitance has been proposed and investigated. This design uses a 3.5 μm thick polyimide layer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the entire structure was grown by liquid phase epitaxy. Lasers with λ=1.3 μm and resonator lengths of 310, 450, and 560 μm exhibited modulation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 72, and 91 mW, respectively. Lasers with λ=0.8 μm and a 600 μm resonator showed a 5.6 GHz modulation bandwidth at an output power of 98 mW. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes</title><author><name sortKey="Berishev, I E" uniqKey="Berishev I">I. E. Berishev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP, Mexico</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Mexique</country><wicri:regionArea>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP</wicri:regionArea><wicri:noRegion>SLP</wicri:noRegion></affiliation></author><author><name sortKey="Gorbachev, A Y" uniqKey="Gorbachev A">A. Y. Gorbachev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP, Mexico</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Mexique</country><wicri:regionArea>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP</wicri:regionArea><wicri:noRegion>SLP</wicri:noRegion></affiliation></author><author><name sortKey="Mishournyi, V A" uniqKey="Mishournyi V">V. A. Mishournyi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP, Mexico</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Mexique</country><wicri:regionArea>IICO UASLP, Alvaro Obregon, 64, 78000 San Luis Potosi, SLP</wicri:regionArea><wicri:noRegion>SLP</wicri:noRegion></affiliation></author><author><name sortKey="Ilyinskaya, N D" uniqKey="Ilyinskaya N">N. D. Ilyinskaya</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg, Russia</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Stankevich, A L" uniqKey="Stankevich A">A. L. Stankevich</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg, Russia</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Tarasov, I S" uniqKey="Tarasov I">I. S. Tarasov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg, Russia</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Phisico-Technical Institute, Russiann Academy of Sciences, 26 Polytechnicheskaya St., 194021 Saint-Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint-Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0089867</idno><date when="1996-02-26">1996-02-26</date><idno type="stanalyst">PASCAL 97-0089867 AIP</idno><idno type="RBID">Pascal:97-0089867</idno><idno type="wicri:Area/Main/Corpus">018F98</idno><idno type="wicri:Area/Main/Repository">019F23</idno><idno type="wicri:Area/Russie/Extraction">001203</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bandwidth</term><term>Buried layers</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Indium phosphides</term><term>LPE</term><term>Modulation</term><term>Quantum wells</term><term>Semiconductor lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Largeur bande</term><term>Couche enterrée</term><term>Gallium arséniure</term><term>Gallium phosphure</term><term>Hétérostructure</term><term>Indium arséniure</term><term>Indium phosphure</term><term>Epitaxie phase liquide</term><term>Modulation</term><term>Puits quantique</term><term>Laser semiconducteur</term><term>4255P</term><term>4260</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The construction of a high power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diode with reduced values of parasitic capacitance has been proposed and investigated. This design uses a 3.5 μm thick polyimide layer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the entire structure was grown by liquid phase epitaxy. Lasers with λ=1.3 μm and resonator lengths of 310, 450, and 560 μm exhibited modulation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 72, and 91 mW, respectively. 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